agilent 4n35 phototransistor optocoupler general purpose type data sheet features high current transfer ratio (ctr: min. 100% at i f = 10 ma, v ce = 10 v) response time (t r : typ., 3 s at v ce = 10 v, i c = 2 ma, r l = 100 ? ) input-output isolation voltage (v iso = 3550 vrms) dual-in-line package ul approved csa approved iec/en/din en 60747-5-2 approved options available: leads with 0.4" (10.16 mm) spacing (w00) leads bends for surface mounting (300) tape and reel for smd (500) iec/en/din en 60747-5-2 approvals (060) applications i/o interfaces for computers system appliances, measuring instruments signal transmission between circuits of different potentials and impedances description the 4n35 is an optocoupler for general purpose applications. it contains a light emitting diode optically coupled to a photo- transistor. it is packaged in a 6-pin dip package and available in wide- lead spacing option and lead bend smd option. response time, t r , is typically 3 s and minimum ctr is 100% at input current of 10 ma. functional diagram ordering information specify part number followed by option number (if desired). 4n35-xxxe lead free option number 000 = no options 060 = iec/en/din en 60747-5-2 option w00 = 0.4" lead spacing option 300 = lead bend smd option 500 = tape and reel packaging option schematic caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. 6 54 123 pin no. and internal connection diagram 1. anode 2. cathode 3. nc 4. emitter 5. collector 6. base 1 2 anode cathode v f + i f 6 5 4 base collector emitter i c
2 package outline drawings 4n35-060e 4n35-w00e 4n35-300e y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 3.3 0.5 (0.13) 0.5 typ. (0.02) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 lead free anode date code *1 a 4n35 v dimensions in millimeters and (inches) y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.5 (0.4) lead free anode date code *1 a 4n35 6.9 0.5 (0.272) 2.3 0.5 (0.09) dimensions in millimeters and (inches) 1.2 0.1 (0.047) 2.54 0.25 (0.1) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.3 (0.4) 1.0 0.25 (0.39) date code *1 y y w w 6.5 0.5 (0.256) lead free anode a 4n35 3.5 0.5 (0.138) 0.35 0.25 (0.014) dimensions in millimeters and (inches) 4N35-000E y y w w 6.5 0.5 (0.256) 3.5 0.5 (0.138) 3.3 0.5 (0.13) 0.5 typ. (0.02) 0.5 0.1 (0.02) 2.54 0.25 (0.1) 2.8 0.5 (0.110) 7.3 0.5 (0.287) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 lead free anode date code *1 a 4n35 dimensions in millimeters and (inches)
3 absolute maximum ratings storage temperature, t s ?5?c to +150?c operating temperature, t a ?5?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 60 ma reverse input voltage, v r 6 v input power dissipation, p i 100 mw collector current, i c 100 ma collector-emitter voltage, v ceo 30 v emitter-collector voltage, v eco 7 v collector-base voltage, v cbo 70 v collector power dissipation 300 mw total power dissipation 350 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 3550 vrms 30 seconds 60 ~ 150 sec 90 sec 60 sec 60 sec 25 c 150 c 200 c 250 c 260 c (peak temperature) 217 c time (sec) temperature ( c) solder reflow temperature profile 1) one-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of (1) above.
4 figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. forward current vs. forward voltage. i f forward current ma 0 t a ambient temperature c -25 75 125 60 25 20 40 100 0 50 100 -55 80 p c collector power dissipation mw 0 t a ambient temperature c -25 75 125 200 25 100 400 0 50 100 -55 300 i f forward current ma 1 v f forward voltage v 2.0 3.0 10 5 500 1.0 0 t a = 75 c 0.5 1.5 2.5 2 20 50 100 200 t a = 50 c t a = 25 c t a = 0 c t a = -25 c * ctr = x 100% i c i f electrical specifications (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f 1.2 1.5 v i f = 10 ma reverse current i r 10 av r = 4 v terminal capacitance c t 50 pf v = 0, f = 1 khz collector dark current i ceo 50nav ce = 10 v, i f = 0, t a = 25 ? c 500 av ce = 30 v, i f = 0, t a = 100 ? c collector-emitter breakdown voltage bv ceo 30 v i c = 0.1 ma, i f = 0 emitter-collector breakdown voltage bv eco 7 vi e = 10 a, i f = 0 collector-base breakdown voltage bv cbo 70 v i c = 0.1 ma, i f = 0 collector current i c 10 ma i f = 10 ma *current transfer ratio ctr 100 % v ce = 10 v collector-emitter saturation voltage v ce(sat) 0.3 v i f = 50 ma, i c = 2 ma response time (rise) t r ?10 sv cc = 10 v, i c = 2 ma response time (fall) t f ?10 sr l = 100 ? isolation resistance r iso 5 x 10 10 1 x 10 11 ? dc 500 v 40 ~ 60% r.h. floating capacitance c f 1 2.5 pf v = 0, f = 1 mhz
5 figure 4. current transfer ratio vs. forward current. figure 5. collector current vs. collector- emitter voltage. figure 6. relative current transfer ratio vs. temperature. figure 7. collector-emitter saturation voltage vs. temperature. figure 8. collector dark current vs. temperature. figure 9. response time vs. load resistance. i c collector current ma 0 v ce collector-emitter voltage v 10 15 20 10 30 5 0 p c (max.) t a = 25 c i f = 15 ma i f = 10 ma i f = 5 ma i f = 2 ma relative current transfer ratio % 0 100 50 150 v ce = 10 v i f = 10 ma t a ambient temperature c -25 75 25 0 50 100 -55 v ce(sat.) collector-emitter saturation voltage v 0 t a ambient temperature c -25 75 25 0.04 0.12 0 50 100 -55 0.08 0.02 0.06 0.10 i c = 2 ma i f = 50 ma response time s 0.1 r l load resistance k ? 0.1 5 1 0.5 0.2 0.5 100 0.2 2 10 0.05 2 20 50 v ce = 10 v i c = 2 ma t a = 25 c tf tr 1 5 10 20 50 200 td ts i ceo collector dark current a 10 -13 -25 80 125 40 20 60 100 -55 t a ambient temperature c v ce = 10 v 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 5 5 5 5 5 5 5 ctr current transfer ratio % 0 i f forward current ma 0.2 5 100 100 1 20 60 180 0.5 2 10 0.1 140 v ce = 10 v t a = 25 c 20 50 500 k ? 100 k ? 40 80 120 160 r be = figure 11. collector-emitter saturation voltage vs. forward current. figure 10. frequency response. voltage gain av db -20 f frequency khz 1 20 500 -5 5 -15 -10 5 21050 0.5 0 100 200 r l = 10 k ? v ce = 5 v i c = 2 ma t a = 25 c r l = 1 k ? r l = 100 ? 0 i f forward current ma 10 15 2 7 5 0 1 3 4 5 6 v ce(sat.) collector-emitter saturation voltage v t a = 25 c i c = 0.5 ma i c = 1 ma i c = 2 ma i c = 3 ma i c = 6 ma i c = 7 ma
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. obsoletes 5989-0291en november 3, 2004 5989-1737en v cc r d input r l output input output 10% 90% t t t t d f s r test circuit for response time test circuit for frequency response v cc r d r l output ~
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